Concentration of point defects in growing CZ silicon...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Concentration of point defects in growing CZ silicon crystal under the internal stresses: effects of impurity doping and thermal stress

K Tanahashi, M Kikuchi, T Higashino, N Inoue, Y Mizokawa
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00534-7
File:
PDF, 148 KB
english, 1999
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