Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
N.T. Son, P.N. Hai, P.T. Huy, T. Gregorkiewicz, C.A.J. Ammerlaan, J.L. Lindström, W.M. Chen, B. Monemar, E. JanzénVolume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00597-9
File:
PDF, 123 KB
english, 1999