Low-dose ion implanted epitaxial 4H–SiC investigated by deep level transient spectroscopy
D Åberg, A Hallén, B.G SvenssonVolume:
273-274
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-4526(99)00601-8
File:
PDF, 123 KB
english, 1999