Influence of stoichiometry and doping on vacancies in...

Influence of stoichiometry and doping on vacancies in n-type GaAs

J Gebauer, M Lausmann, F Redmann, R Krause-Rehberg
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Volume:
273-274
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-4526(99)00615-8
File:
PDF, 141 KB
english, 1999
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