Aspects of defects in silica related to dielectric...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

Peter E Blöchl, James H Stathis
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Volume:
273-274
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-4526(99)00628-6
File:
PDF, 104 KB
english, 1999
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