Mechanism for dicarbon defect formation in AlAs and GaAs

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Mechanism for dicarbon defect formation in AlAs and GaAs

C.D Latham, R Jones, M Haugk, Th Frauenheim, P.R Briddon
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00649-3
File:
PDF, 158 KB
english, 1999
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