Normally-on 4H-SiC Vertical Junction Field Effect...

Materials Today: Proceedings 2015 Vol. 2; Iss. 10

Normally-on 4H-SiC Vertical Junction Field Effect Transistor (VJFET): Design and Analysis Using TCAD Simulation

Khalid, Muhammad, Riaz, Saira, Naseem, Shahzad
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Volume:
2
Year:
2015
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2015.11.118
File:
PDF, 514 KB
english, 2015
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