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Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations
Simon, Tom, Lutz, Josef, Bhojani, Riteshkumar, Kowalsky, JensLanguage:
english
Journal:
IET Power Electronics
DOI:
10.1049/iet-pel.2015.0019
Date:
January, 2015
File:
PDF, 1.38 MB
english, 2015