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Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
S Taniguchi, T Kuwayama, Y.-C Zhu, Y Matsumoto, T ShibataVolume:
277
Year:
2000
Language:
english
Pages:
8
DOI:
10.1016/s0921-5093(99)00542-0
File:
PDF, 1018 KB
english, 2000