Low-doped 6H-SiC n-type epilayers grown by sublimation...

Materials Science and Engineering: B 2000 Vol. 77; Iss. 1

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A.A. Lebedev, D.V. Davydov, A.M. Strel'chuk, A.S. Tregubova, C. Raynaud, J.-P. Chante, M.-L. Locatelli, D. Planson, J. Milan, P. Godignon, F.J. Campos, N. Mestres, J. Pascual, G. Brezean
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Volume:
77
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(00)00464-5
File:
PDF, 260 KB
english, 2000
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