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Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity
A Ahaitouf, A Bath, P Thevenin, E AbarkanVolume:
77
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0921-5107(00)00475-x
File:
PDF, 128 KB
english, 2000