1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs...

Materials Science and Engineering: B 2000 Vol. 78; Iss. 2-3

1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response

G Saint-Girons, A Mereuta, J.M Gérard, A Ramdane, I Sagnes
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Volume:
78
Year:
2000
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(00)00542-0
File:
PDF, 79 KB
english, 2000
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