Ultra high vacuum-based in situ characterization of...

Materials Science and Engineering: B 2001 Vol. 80; Iss. 1-3

Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance–voltage technique

Hideki Hasegawa, Hiroshi Takahashi, Toshiyuki Yoshida, Takamasa Sakai
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Volume:
80
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(00)00638-3
File:
PDF, 254 KB
english, 2001
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