Material quality improvements for high voltage 4H-SiC...

Materials Science and Engineering: B 2001 Vol. 80; Iss. 1-3

Material quality improvements for high voltage 4H-SiC diodes

E. Kalinina, V. Kossov, A. Shchukarev, V. Bratus, G Pensl, S. Rendakova, V. Dmitriev, A. Hallen
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Volume:
80
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(00)00660-7
File:
PDF, 415 KB
english, 2001
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