GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE
K Hiramatsu, M Haino, M Yamaguchi, H Miyake, A Motogaito, N Sawaki, Y Iyechika, T MaedaVolume:
82
Year:
2001
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(00)00692-9
File:
PDF, 156 KB
english, 2001