Time-resolved optical properties of GaN grown by...

Materials Science and Engineering: B 2001 Vol. 82; Iss. 1-3

Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant

G Pozina, J.P Bergman, B Monemar, S Yamaguchi, H Amano, I Akasaki
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Volume:
82
Year:
2001
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(00)00714-5
File:
PDF, 92 KB
english, 2001
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