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Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements
A Kasic, M Schubert, B Rheinländer, V Riede, S Einfeldt, D Hommel, B Kuhn, J Off, F ScholzVolume:
82
Year:
2001
Language:
english
Pages:
3
DOI:
10.1016/s0921-5107(00)00753-4
File:
PDF, 78 KB
english, 2001