Cryogenic field effect transistors using strained silicon...

Materials Science and Engineering: B 2001 Vol. 87; Iss. 3

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

M.J Rack, T.J Thornton, D.K Ferry, Jeff Roberts, Richard C Westhoff, McDonald Robinson
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Volume:
87
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(01)00725-5
File:
PDF, 385 KB
english, 2001
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