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First AlGaN/GaN MOSFET with photoanodic gate dielectric
D Mistele, T Rotter, K.S Röver, S Paprotta, M Seyboth, V Schwegler, F Fedler, H Klausing, O.K Semchinova, J Stemmer, J Aderhold, J GraulVolume:
93
Year:
2002
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(02)00052-1
File:
PDF, 293 KB
english, 2002