Observation of ion-induced changes in the channel current...

Materials Science and Engineering: B 2002 Vol. 93; Iss. 1-3

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Ralph Neuberger, Gerhard Müller, Martin Eickhoff, Oliver Ambacher, Martin Stutzmann
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Volume:
93
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(02)00053-3
File:
PDF, 368 KB
english, 2002
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