Radiation induced defects in MOVPE grown n-GaN

Materials Science and Engineering: B 2000 Vol. 71; Iss. 1-3

Radiation induced defects in MOVPE grown n-GaN

S.A Goodman, F.D Auret, F.K Koschnick, J.-M Spaeth, B Beaumont, P Gibart
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Volume:
71
Year:
2000
Language:
english
Pages:
4
DOI:
10.1016/s0921-5107(99)00357-8
File:
PDF, 117 KB
english, 2000
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