Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology
V.P Popov, I.V Antonova, V.F Stas, L.V Mironova, A.K Gutakovskii, E.V Spesivtsev, A.S Mardegzhov, A.A Franznusov, G.N FeofanovVolume:
73
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0921-5107(99)00437-7
File:
PDF, 715 KB
english, 2000