Formation and ordering effects of C-induced Ge dots grown...

Materials Science and Engineering: B 2000 Vol. 74; Iss. 1-3

Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy

Oliver Leifeld, André Beyer, Elisabeth Müller, Klaus Kern, Detlev Grützmacher
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
74
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0921-5107(99)00565-6
File:
PDF, 1.17 MB
english, 2000
Conversion to is in progress
Conversion to is failed