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Void formation in titanium desilicide/p+ silicon interface: impact on junction leakage and silicide sheet resistance
K.L Pey, R Sundaresan, H Wong, S.Y Siah, C.H TungVolume:
74
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0921-5107(99)00578-4
File:
PDF, 504 KB
english, 2000