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Frustrated Etching during H/Si(111) Methoxylation Produces Fissured Fluorinated Surfaces, Whereas Direct Fluorination Preserves the Atomically Flat Morphology
Skibinski, Erik S., DeBenedetti, William J. I., Rupich, Sara M., Chabal, Yves J., Hines, Melissa A.Volume:
119
Language:
english
Journal:
The Journal of Physical Chemistry C
DOI:
10.1021/acs.jpcc.5b08889
Date:
November, 2015
File:
PDF, 6.75 MB
english, 2015