Properties of Schottky Barrier Diodes on (In x Ga 1– x ) 2 O 3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach
von Wenckstern, H., Splith, D., Werner, A., Müller, S., Lorenz, M., Grundmann, M.Volume:
17
Language:
english
Journal:
ACS Combinatorial Science
DOI:
10.1021/acscombsci.5b00084
Date:
December, 2015
File:
PDF, 1.96 MB
english, 2015