Nanoscale-RingFET: An Analytical Drain Current Model...

IEEE Transactions on Electron Devices 2015 / 12 Vol. 62; Iss. 12

Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs

Kumar, Sachin, Kumari, Vandana, Singh, Sanjeev, Saxena, Manoj, Gupta, Mridula
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2493578
Date:
December, 2015
File:
PDF, 2.42 MB
english, 2015
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