Concentration of F2 and F3+ defects in He+ implanted LiF...

Concentration of F2 and F3+ defects in He+ implanted LiF crystals determined by optical transmission and photoluminescence measurements

F. Bonfigli, B. Jacquier, R.M. Montereali, P. Moretti, V. Mussi, E. Nichelatti, F. Somma
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Volume:
24
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0925-3467(03)00137-x
File:
PDF, 143 KB
english, 2003
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