Normally-off GaN-HEMTs with p-type gate: Off-state...

Microelectronics Reliability 2015 / 12

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Meneghini, M., Hilt, O., Fleury, C., Silvestri, R., Capriotti, M., Strasser, G., Pogany, D., Bahat-Treidel, E., Brunner, F., Knauer, A., Würfl, J., Rossetto, I., Zanoni, E., Meneghesso, G., Dalcanale,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.11.026
Date:
December, 2015
File:
PDF, 3.56 MB
english, 2015
Conversion to is in progress
Conversion to is failed