Si3N4layers for the in-situ passivation of GaN-based HEMT...

Semiconductors 2015 / 11 Vol. 49; Iss. 11

Si3N4layers for the in-situ passivation of GaN-based HEMT structures

Yunin, P. A., Drozdov, Yu. N., Drozdov, M. N., Korolev, S. A., Okhapkin, A. I., Khrykin, O. I., Shashkin, V. I.
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Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615110251
Date:
November, 2015
File:
PDF, 301 KB
english, 2015
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