n–p Junction formation in p-type silicon by hydrogen ion implantation
D Barakel, A Ulyashin, I Périchaud, S MartinuzziVolume:
72
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0927-0248(01)00176-3
File:
PDF, 129 KB
english, 2002