n–p Junction formation in p-type silicon by hydrogen ion...

n–p Junction formation in p-type silicon by hydrogen ion implantation

D Barakel, A Ulyashin, I Périchaud, S Martinuzzi
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Volume:
72
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s0927-0248(01)00176-3
File:
PDF, 129 KB
english, 2002
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