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Process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnO x channel thin-film transistors
Takenaka, Kosuke, Nakata, Keitaro, Otani, Hirofumi, Osaki, Soichiro, Uchida, Giichiro, Setsuhara, YuichiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.01AA18
Date:
January, 2016
File:
PDF, 1013 KB
english, 2016