Influence of growth pressure on filling 4H-SiC trenches by...

Japanese Journal of Applied Physics 2016 / 01 Vol. 55; Iss. 1S

Influence of growth pressure on filling 4H-SiC trenches by CVD method

Ji, Shiyang, Kojima, Kazutoshi, Kosugi, Ryoji, Saito, Shingo, Sakuma, Yuuki, Tanaka, Yasunori, Yoshida, Sadafumi, Himi, Hiroaki, Okumura, Hajime
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.01AC04
Date:
January, 2016
File:
PDF, 609 KB
english, 2016
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