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Al passivation effect at the HfO2/GaAs interface: A first-principles study
Cai, Genwang, Sun, Qiang, Jia, Yu, Liang, ErjunVolume:
41
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.08.001
Date:
January, 2016
File:
PDF, 2.46 MB
english, 2016