SPIE Proceedings [SPIE Microelectronic Manufacturing '99 - Santa Clara, CA (Wednesday 22 September 1999)] Microelectronic Device Technology III - Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation
Kokhanenko, Andrej P., Korotaev, Aleksander G., Voitsekhovskii, Aleksander V., Grushin, Ivan, Opekunov, Mikhail S., Remnev, Gennady E., Burnett, David, Tsuchiya, ToshiakiVolume:
3881
Year:
1999
Language:
english
DOI:
10.1117/12.360564
File:
PDF, 355 KB
english, 1999