[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Comparative study of parasitic elements on RF FoM in 28 nm FD SOI and bulk technologies
Esfeh, B. Kazemi, Kilchytska, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P.Year:
2015
Language:
english
DOI:
10.1109/S3S.2015.7333532
File:
PDF, 529 KB
english, 2015