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SPIE Proceedings [SPIE Symposium on Integrated Optoelectronics - San Jose, CA (Thursday 20 January 2000)] Photodetectors: Materials and Devices V - Effect of annealing on arsenic activation and device performance in mid-infrared HgCdTe on silicon grown by MBE
Ashokan, Renganathan, Lee, Tae-Seok, Dhar, N., Yoo, Sung S., Sivananthan, Sivalingam, Brown, Gail J., Razeghi, ManijehVolume:
3948
Year:
2000
Language:
english
DOI:
10.1117/12.382143
File:
PDF, 749 KB
english, 2000