MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
C. Kirchner, V. Schwegler, F. Eberhard, M. Kamp, K.J. Ebeling, P. Prystawko, M. Leszczynski, I. Grzegory, S. PorowskiVolume:
41
Year:
2000
Language:
english
Pages:
27
DOI:
10.1016/s0960-8974(00)00044-9
File:
PDF, 1.21 MB
english, 2000