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Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor
Hou, Tzu-Ching, Lin, Yueh-Chin, Hsu, Hisang-Hua, Lin, Tai-Wei, Iwai, Hiroshi, Wong, Yuen-Yee, Kakushima, Kuniyuki, Wu, Wen-Hao, Chang, Edward YiVolume:
52
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2015.1087
Date:
January, 2016
File:
PDF, 570 KB
english, 2016