Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD
Um, Dae-Young, Mandal, Arjun, Lee, Da-Som, Park, Ji-Hyeon, Lee, Cheul-RoVolume:
18
Year:
2016
Language:
english
Journal:
CrystEngComm
DOI:
10.1039/C5CE01832C
File:
PDF, 6.08 MB
english, 2016