Charge trapping in surface accumulation layer of heavily...

Chinese Physics B 2015 / 12 Vol. 24; Iss. 12

Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

Ma, Liu-Hong, Han, Wei-Hua, Wang, Hao, Yang, Xiang, Yang, Fu-Hua
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/12/128101
Date:
December, 2015
File:
PDF, 1.57 MB
english, 2015
Conversion to is in progress
Conversion to is failed