Mechanisms of temperature dependence of threshold voltage...

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International Journal of Electronics 2015 / 04

Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses

Nishida, Yukio, Yokoyama, Shin
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Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207217.2015.1036809
Date:
April, 2015
File:
PDF, 843 KB
english, 2015
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