Comparison of the AlxGa1–xN/GaN Heterostructures...

IEEE Transactions on Electron Devices 2016 / 1 Vol. 63; Iss. 1

Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

Tham, Wai Hoe, Ang, Diing Shenp, Bera, Lakshmi Kanta, Dolmanan, Surani Bin, Bhat, Thirumaleshwara N, Lin, Vivian K. X., Tripathy, Sudhiranjan
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Volume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2501410
Date:
January, 2016
File:
PDF, 3.10 MB
english, 2016
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