Performance Enhancement of Microwave GaN HEMTs Without an...

IEEE Transactions on Electron Devices 2016 / 1 Vol. 63; Iss. 1

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Bergsten, Johan, Chen, Jr-Tai, Gustafsson, Sebastian, Malmros, Anna, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas
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Volume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2501838
Date:
January, 2016
File:
PDF, 1.08 MB
english, 2016
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