Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials...

Russian Physics Journal 2015 / 11 Vol. 58; Iss. 7

Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions

Timofeev, V. A., Kokhanenko, A. P., Nikiforov, A. I., Mashanov, V. I., Tuktamyshev, A. R., Loshkarev, I. D.
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Volume:
58
Language:
english
Journal:
Russian Physics Journal
DOI:
10.1007/s11182-015-0596-4
Date:
November, 2015
File:
PDF, 1.62 MB
english, 2015
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