High Peak Current MOS Gate-Triggered Thyristor with Fast...

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IEEE Electron Device Letters 2015

High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing Switch Applications

Chen, Wanjun, Liu, Chao, Tang, Xuefeng, Lou, Lunfei, Cheng, Wu, Zhou, Qi, Li, Zhaoji, Zhang, Bo
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Year:
2015
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2511182
File:
PDF, 793 KB
english, 2015
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