[IEEE 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Singapore, Singapore (2015.6.1-2015.6.4)] 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Influences of k values of gate dielectric and buried insulator on subthreshold slope of UTB SOI MOSFETs

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