A New Threshold Voltage and Drain Current Model for...

Journal of Computational and Theoretical Nanoscience 2015 / 09 Vol. 12; Iss. 9

A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs

Dutta, Pradipta, Syamal, Binit, Koley, Kalyan, Mohankumar, N., Sarkar, C. K.
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Volume:
12
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2015.4057
Date:
September, 2015
File:
PDF, 772 KB
english, 2015
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