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High-mobility BaSnO 3 thin-film transistor with HfO 2 gate insulator
Kim, Young Mo, Park, Chulkwon, Kim, Useong, Ju, Chanjong, Char, KookrinVolume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.011201
Date:
January, 2016
File:
PDF, 1.40 MB
english, 2016