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Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Brubaker, Matt D., Duff, Shannon M., Harvey, Todd E., Blanchard, Paul T., Roshko, Alexana, Sanders, Aric W., Sanford, Norman A., Bertness, Kris A.Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.5b00910
Date:
December, 2015
File:
PDF, 6.99 MB
english, 2015